Heisener Electronics
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IXRFSM12N100

1000V|12A (Tc)|940W
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2A 1000V MOSFET IN SMPD PACKAGE

Specifications

Brand
IXYS-RF
Package
16-SMPD
Packaging
—
Weight
—

Total Inventory

191pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXRFSM12N100 from IXYS-RF fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS-RF
SeriesSMPD
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs1.05Ohm @ 6A, 15V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2875pF @ 800V
FET Feature-
Power Dissipation (Max)940W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package16-SMPD
Package / Case16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad

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