Heisener Electronics
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IXKP10N60C5

600V|10A (Tc)|-
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MOSFET N-CH 600V 10A TO220AB

Specifications

Brand
IXYS
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

484pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXKP10N60C5 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs385mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id3.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 100V
FET FeatureSuper Junction
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

ixkp10n60c5.pdf

PDF Document · 4 pages

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