Heisener Electronics
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IXKG25N80C

800V|25A (Tc)|250W (Tc)
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MOSFET N-CH 800V 25A ISO264

Specifications

Brand
IXYS
Package
ISO264™
Packaging
—
Weight
—

Total Inventory

329pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXKG25N80C from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs166nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISO264™
Package / CaseISO264™

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INTEGRATED CIRCUIT

Datasheet & Documents

ixkg25n80c.pdf

PDF Document · 2 pages

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