Heisener Electronics
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IXFX320N17T2

170V|320A (Tc)|1670W (Tc)
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MOSFET N-CH 170V 320A PLUS247

Specifications

Brand
IXYS
Package
PLUS247™-3
Packaging
—
Weight
—

Total Inventory

429pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFX320N17T2 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesGigaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)170V
Current - Continuous Drain (Id) @ 25°C320A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs640nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds45000pF @ 25V
FET Feature-
Power Dissipation (Max)1670W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

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Datasheet & Documents

ixfk320n17t2.pdf

PDF Document · 6 pages

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Datasheet Preview

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