Heisener Electronics
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IXFT9N80Q

800V|9A (Tc)|180W (Tc)
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MOSFET N-CH 800V 9A TO-268

Specifications

Brand
IXYS
Package
TO-268
Packaging
—
Weight
—

Total Inventory

498pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFT9N80Q from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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Datasheet & Documents

ixft9n80q.pdf

PDF Document · 2 pages

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