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1000V|6A (Tc)|180W (Tc)
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MOSFET N-CH 1000V 6A TO268
Specifications
- Brand
- IXYS-RF
- Package
- TO-268 (IXFT)
- Packaging
- —
- Weight
- —
Total Inventory
533pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IXFT6N100F_1 from IXYS-RF fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS-RF | |
| Series | HiPerRF™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1770pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 180W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-268 (IXFT) | |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Datasheet & Documents
ixfh6n100f.pdf
PDF Document · 2 pages
