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100V|320A (Tc)|1000W (Tc)
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MOSFET N-CH 100V 320A TO-26
Specifications
- Brand
- IXYS
- Package
- TO-268
- Packaging
- —
- Weight
- —
Total Inventory
333pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IXFT320N10T2 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | GigaMOS™, HiPerFET™, TrenchT2™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 320A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 26000pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1000W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-268 | |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Datasheet & Documents
ixft320n10t2.pdf
PDF Document · 6 pages
