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IXFR26N100P

1000V|15A (Tc)|290W (Tc)
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MOSFET N-CH 1000V 15A ISOPLUS247

Specifications

Brand
IXYS
Package
ISOPLUS247™
Packaging
—
Weight
—

Total Inventory

316pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFR26N100P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 13A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs197nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds11900pF @ 25V
FET Feature-
Power Dissipation (Max)290W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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Datasheet & Documents

ixfr26n100p.pdf

PDF Document · 4 pages

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