Heisener Electronics
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IXFR14N100Q2

1000V|9.5A (Tc)|200W (Tc)
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MOSFET N-CH 1KV 9.5A ISOPLUS247

Specifications

Brand
IXYS
Package
ISOPLUS247™
Packaging
—
Weight
—

Total Inventory

400pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFR14N100Q2 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.1Ohm @ 7A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs83nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS247™
Package / CaseISOPLUS247™

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Datasheet & Documents

ixfr14n100q2.pdf

PDF Document · 4 pages

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Datasheet Preview

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