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850 V|8A (Tc)|200W (Tc)
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MOSFET N-CH 850V 8A TO3P
Specifications
- Brand
- IXYS
- Package
- TO-3P
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IXFQ8N85X from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | IXYS | |
| Series | HiPerFET™, Ultra X | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 850 V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 654 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 200W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P | |
| Package / Case | TO-3P-3, SC-65-3 |
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