Heisener Electronics
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IXFQ24N60X

600V|24A (Tc)|400W (Tc)
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MOSFET N-CH 600V 24A TO-3P

Specifications

Brand
IXYS
Package
TO-3P
Packaging
—
Weight
—

Total Inventory

376pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFQ24N60X from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs175mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1910pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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Datasheet & Documents

ixfh24n60x.pdf

PDF Document · 6 pages

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