IXFN82N60Q3
600V|66A (Tc)|960W (Tc)
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET N-CH 600V 66A SOT-227
规格参数
- 品牌
- IXYS
- 封装
- SOT-227B
- 包装方式
- —
库存总量
377个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 IXYS 的 IXFN82N60Q3 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | IXYS | |
| Series | HiPerFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 41A, 10V | |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA | |
| Gate Charge (Qg) (Max) @ Vgs | 275nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 13500pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 960W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | SOT-227B | |
| Package / Case | SOT-227-4, miniBLOC |
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数据手册与文档
ixfn82n60q3.pdf
PDF文档 · 5 pages
