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1200 V|54A (Tc)|-
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SIC AND MULTICHIP DISCRETE
Specifications
- Brand
- IXYS
- Package
- SOT-227B
- Packaging
- —
- Weight
- —
Total Inventory
564pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IXFN55N120SK from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 40A, 15V | |
| Vgs(th) (Max) @ Id | 3.6V @ 12mA | |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 15 V | |
| Vgs (Max) | +15V, -4V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3360 pF @ 1000 V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | SOT-227B | |
| Package / Case | SOT-227-4, miniBLOC |
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