Heisener Electronics
BOM

IXFN50N120SK

1200V|48A (Tc)|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH

Specifications

Brand
IXYS
Package
SOT-227B
Packaging
—
Weight
—

Total Inventory

184pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFN50N120SK from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs115nC @ 20V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds1895pF @ 1000V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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Datasheet & Documents

ixfn50n120sk.pdf

PDF Document · 4 pages

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