Heisener Electronics
BOM

IXFN32N100Q3

1000V|28A (Tc)|780W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 1000V 28A SOT-227

Specifications

Brand
IXYS
Package
SOT-227B
Packaging
—
Weight
—

Total Inventory

496pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFN32N100Q3 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9940pF @ 25V
FET Feature-
Power Dissipation (Max)780W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

Recommended Products

4426-2RC

4426-2RC

FIXED IND 5NH 3A SMD

B1116NLT

B1116NLT

IC CHIP

ASFLMPC-44-000MHZ-LY-T3

ASFLMPC-44-000MHZ-LY-T3

MEMS OSC XO 44.0000MHZ CMOS SMD

2225Y1000473JFR

2225Y1000473JFR

CAP CER 0.047UF 100V C0G 2225

C1206C153G5GEC7210

C1206C153G5GEC7210

CAP CER 1206 15NF 50V C0G 2%

T499B475K010ATE3K5

T499B475K010ATE3K5

CAP TANT 4.7UF 10% 10V 1411

RTDW2N-1KF8

RTDW2N-1KF8

SENSOR RTD 1K OHM 1% 6000PPM

GAL22V10D-25QP

GAL22V10D-25QP

IC CPLD 10MC 25NS 24DIP

Y11211K91000A0L

Y11211K91000A0L

RES SMD 1.91K OHM 1/4W 2512

929745-02-22-I

929745-02-22-I

CONN HEADER 44POS DUAL .100" R/A

Datasheet & Documents

ixfn32n100q3.pdf

PDF Document · 5 pages

Download

Datasheet Preview

Download