Heisener Electronics
BOM

IXFM67N10

100V|67A (Tc)|300W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER MOSFET TO-3

Specifications

Brand
IXYS
Package
TO-204AE
Packaging
—
Weight
—

Total Inventory

375pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFM67N10 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 33.5A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AE
Package / CaseTO-204AE

Recommended Products

77061103

77061103

RES ARRAY 5 RES 10K OHM 6SIP

B37931K1102K060

B37931K1102K060

CAP CER 1000PF 100V X7R 0603

CBR04C309B2GAC

CBR04C309B2GAC

CAP CER 3PF 200V .1PF% COG 0402

ELXY100ELL681MH20D

ELXY100ELL681MH20D

CAP ALUM 680UF 20% 10V RADIAL

MAX1092ACEG_1A3

MAX1092ACEG_1A3

IC ADC 10BIT SAR 24QSOP

SIT8008AI-11-33S-10-00000E

SIT8008AI-11-33S-10-00000E

OSC MEMS 10.0000MHZ LVCMOS SMD

2716703

2716703

CONN BARRIER STRIP 2CIRCUIT

ESQT-118-02-F-D-420

ESQT-118-02-F-D-420

ELEVATED 2MM SOCKETS

CLT-119-02-F-D-K-TR

CLT-119-02-F-D-K-TR

2MM SOCKET STRIPS

766-32-002

766-32-002

PWR ENT MOD RCPT IEC320-C14 PNL