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IXFK32N100P

1000V|32A (Tc)|960W (Tc)
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MOSFET N-CH 1000V 32A TO-264

Specifications

Brand
IXYS
Package
TO-264AA (IXFK)
Packaging
—
Weight
—

Total Inventory

208pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFK32N100P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs225nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds14200pF @ 25V
FET Feature-
Power Dissipation (Max)960W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

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Datasheet & Documents

ixfk32n100p.pdf

PDF Document · 4 pages

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