IXFH58N20Q

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Discover how IXFH58N20Q from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	IXYS
Series	HiPerFET™
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 29A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 25V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Package / Case	TO-247-3

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