IXFH36N55Q2

550V|36A (Tc)|560W (Tc)

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MOSFET N-CH 550V 36A TO-247

318pcs

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Purchase Quantity

MOQ: 1 pcs

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Manufacturer	IXYS
Series	HiPerFET™
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 25V
FET Feature	-
Power Dissipation (Max)	560W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Package / Case	TO-247-3