Heisener Electronics
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IXFH21N50F_1

500V|21A (Tc)|300W (Tc)
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MOSFET N-CH 500V 21A TO247

Specifications

Brand
IXYS-RF
Package
TO-247 (IXFH)
Packaging
—
Weight
—

Total Inventory

431pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFH21N50F_1 from IXYS-RF fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS-RF
SeriesHiPerRF™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXFH)
Package / CaseTO-247-3

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Datasheet & Documents

ixfh21n50f.pdf

PDF Document · 2 pages

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