Heisener Electronics
BOM

IXFC20N80P

800V|11A (Tc)|166W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 800V 11A ISOPLUS220

Specifications

Brand
IXYS
Package
ISOPLUS220™
Packaging
—
Weight
—

Total Inventory

440pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFC20N80P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 10A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs85nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4680pF @ 25V
FET Feature-
Power Dissipation (Max)166W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS220™
Package / CaseISOPLUS220™

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Datasheet & Documents

ixfc20n80p.pdf

PDF Document · 4 pages

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