Heisener Electronics
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IXFB82N60P

600V|82A (Tc)|1250W (Tc)
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MOSFET N-CH 600V 82A PLUS 264

Specifications

Brand
IXYS
Package
PLUS264™
Packaging
—
Weight
—

Total Inventory

220pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFB82N60P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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Datasheet & Documents

ixfb82n60p.pdf

PDF Document · 5 pages

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