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IXFB100N50P

500V|100A (Tc)|1890W (Tc)
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MOSFET N-CH 500V 100A PLUS264

Specifications

Brand
IXYS
Package
PLUS264™
Packaging
—
Weight
—

Total Inventory

481pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFB100N50P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs49mOhm @ 50A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds20000pF @ 25V
FET Feature-
Power Dissipation (Max)1890W (Tc)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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Datasheet & Documents

ixfb100n50p.pdf

PDF Document · 5 pages

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