Heisener Electronics
BOM

IXFA18N65X2

650 V|18A (Tc)|290W (Tc)
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MOSFET N-CH 650V 18A TO263

Specifications

Brand
IXYS
Package
TO-263 (D2PAK)
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFA18N65X2 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesHiPerFET™, Ultra X2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1520 pF @ 25 V
FET Feature-
Power Dissipation (Max)290W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2PAK)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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