Heisener Electronics
BOM

IXFA180N10T2

100V|180A (Tc)|480W (Tc)
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MOSFET N-CH 100V 180A TO-263AA

Specifications

Brand
IXYS
Package
TO-263 (IXFA)
Packaging
—
Weight
—

Total Inventory

198pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXFA180N10T2 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesGigaMOS™, HiPerFET™, TrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10500pF @ 25V
FET Feature-
Power Dissipation (Max)480W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXFA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

ixfa180n10t2.pdf

PDF Document · 6 pages

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