Heisener Electronics
BOM

IXDN602SI

4.5V ~ 35V|2A, 2A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 2A DUAL LO SIDE 8-SO

Specifications

Brand
IXYS Integrated Circuits Division
Package
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging
—
Weight
—

Total Inventory

1,120pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXDN602SI from IXYS Integrated Circuits Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS Integrated Circuits Division
Series-
Driven ConfigurationLow-Side
Channel TypeIndependent
Number of Drivers2
Gate TypeIGBT, N-Channel, P-Channel MOSFET
Voltage - Supply4.5V ~ 35V
Logic Voltage - VIL, VIH0.8V, 3V
Current - Peak Output (Source, Sink)2A, 2A
Input TypeNon-Inverting
High Side Voltage - Max (Bootstrap)-
Rise / Fall Time (Typ)7.5ns, 6.5ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package8-SOIC-EP

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Datasheet & Documents

ixdi602si.pdf

PDF Document · 13 pages

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Datasheet Preview

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