Heisener Electronics
BOM

ISP98DP10LMXTSA1

100 V|930mA (Ta), 1.55A (Tc)|1.8W (Ta), 5W (Tc)
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SMALL SIGNAL MOSFETS PG-SOT223-4

Specifications

Brand
Infineon Technologies
Package
PG-SOT223-4
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ISP98DP10LMXTSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C930mA (Ta), 1.55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs980mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id2V @ 165µA
Gate Charge (Qg) (Max) @ Vgs7.2 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 50 V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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