Heisener Electronics
BOM

ISL9N302AS3_1

30V|75A (Tc)|345W (Tc)
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MOSFET N-CH 30V 75A TO-262AA

Specifications

Brand
ON Semiconductor
Package
I2PAK (TO-262)
Packaging
—
Weight
—

Total Inventory

126pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ISL9N302AS3_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000pF @ 15V
FET Feature-
Power Dissipation (Max)345W (Tc)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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