Heisener Electronics
BOM

ISC151N20NM6ATMA1

200 V|9.1A (Ta), 74A (Tc)|3W (Ta), 200W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V

Specifications

Brand
Infineon Technologies
Package
PG-TDSON-8 FL
Packaging
—
Weight
—

Total Inventory

15,000pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ISC151N20NM6ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™ 6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9.1A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Rds On (Max) @ Id, Vgs14mOhm @ 50A, 15V
Vgs(th) (Max) @ Id4.5V @ 105µA
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 100 V
FET Feature-
Power Dissipation (Max)3W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8 FL
Package / Case8-PowerTDFN

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