Heisener Electronics
BOM

ISC110N12NM6ATMA1

120 V|11A (Ta), 62A (Tc)|3W (Ta), 94W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V

Specifications

Brand
Infineon Technologies
Package
SuperSO8
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ISC110N12NM6ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™ 6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 26A, 10V
Vgs(th) (Max) @ Id3.6V @ 35µA
Gate Charge (Qg) (Max) @ Vgs19.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 60 V
FET Feature-
Power Dissipation (Max)3W (Ta), 94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSuperSO8
Package / Case8-PowerTDFN

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