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120 V|11A (Ta), 63A (Tc)|3W (Ta), 94W (Tc)
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OPTIMOS 6 POWER-TRANSISTOR,120V
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TDSON-8
- Packaging
- —
- Weight
- —
Total Inventory
25,701pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how ISC104N12LM6ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ 6 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 120 V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V | |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 28A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA | |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 60 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 3W (Ta), 94W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TDSON-8 | |
| Package / Case | 8-PowerTDFN |
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