Heisener Electronics
BOM

ISC035N10NM5LFATMA1

100 V|19A (Ta), 164A (Tc)|3W (Ta), 217W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

OPTIMOSTM5LINEARFET100V

Specifications

Brand
Infineon Technologies
Package
PG-TDSON-8 FL
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ISC035N10NM5LFATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™ 5
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 164A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.9V @ 115µA
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7200 pF @ 50 V
FET Feature-
Power Dissipation (Max)3W (Ta), 217W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8 FL
Package / Case8-PowerTDFN

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