Heisener Electronics
BOM

IRLZ34NS

55V|30A (Tc)|3.8W (Ta), 68W (Tc)
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MOSFET N-CH 55V 30A D2PAK

Specifications

Brand
Infineon Technologies
Package
D2PAK
Packaging
—
Weight
—

Total Inventory

482pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRLZ34NS from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds880pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

irlz34nl.pdf

PDF Document · 11 pages

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Datasheet Preview

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