Heisener Electronics
BOM

IRLW510ATM

100V|5.6A (Tc)|3.8W (Ta), 37W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 100V 5.6A I2PAK

Specifications

Brand
Fairchild/ON Semiconductor
Package
I2PAK
Packaging
—
Weight
—

Total Inventory

5,552pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRLW510ATM from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerFairchild/ON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs440 mOhm @ 2.8A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds235pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 37W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA

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Datasheet & Documents

irlw510atm.pdf

PDF Document · 9 pages

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