Heisener Electronics
BOM

IRLS640A

200V|9.8A (Tc)|40W (Tc)
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MOSFET N-CH 200V 9.8A TO-220F

Specifications

Brand
Fairchild/ON Semiconductor
Package
TO-220F
Packaging
—
Weight
—

Total Inventory

7,956pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRLS640A from Fairchild/ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerFairchild/ON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs180 mOhm @ 4.9A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1705pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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Datasheet & Documents

irls640a.pdf

PDF Document · 10 pages

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