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30V|3.6A|1.5W
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MOSFET 2N-CH 30V 3.6A PQFN
Specifications
- Brand
- Infineon Technologies
- Package
- 6-VDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
377pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRLHS6376TR2PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 3.6A | |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 3.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V | |
| Power - Max | 1.5W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-VDFN Exposed Pad | |
| Supplier Device Package | 6-PQFN (2x2) |
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