IRLD120PBF

100V|1.3A (Ta)|1.3W (Ta)

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MOSFET N-CH 100V 1.3A 4-DIP

17,521pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	Vishay Siliconix
Series	-
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Rds On (Max) @ Id, Vgs	270mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)