Contact
Send MessageIRL60B216
60V|195A (Tc)|375W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 60V 195A
Specifications
- Brand
- Infineon Technologies
- Package
- TO-220AB
- Packaging
- —
- Weight
- —
Total Inventory
1,105pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRL60B216 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET®, StrongIRFET™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 258nC @ 4.5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 15570pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 375W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
Recommended Products
RES MF 1/4W 5% AXIAL
RES SMD 71.5 OHM 1% 1/4W 1206
MEMS OSC XO 10.0000MHZ H/LV-CMOS
CAP CER 160PF 50V C0G/NP0 0805
DISPLAY LCD TFT 4.3"" 480X272
IC REG BOOST ADJ 3A 20HTSSOP
TERM BLOCK PLUG 12POS 90DEG 5MM
CONN TERM BLK FEED THRU 14-22AWG
2MM SOCKET STRIPS
IC OPAMP GP 1 CIRC 8SOPWRPAD
Datasheet & Documents
irl60b216.pdf
PDF Document · 10 pages
