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1200V|-|-
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IGBT 1200V ULTRA FAST DIE
Specifications
- Brand
- Infineon Technologies
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
236pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRG7CH81K10EF-R from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| IGBT Type | - | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | - | |
| Current - Collector Pulsed (Icm) | - | |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 150A | |
| Power - Max | - | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | 745nC | |
| Td (on/off) @ 25°C | 70ns/330ns | |
| Test Condition | 600V, 150A, 1Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
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Datasheet & Documents
irg7ch81k10ef-r.pdf
PDF Document · 4 pages
