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1200V|-|-
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IGBT 1200V ULTRA FAST DIE
Specifications
- Brand
- Infineon Technologies
- Package
- Die
- Packaging
- β
- Weight
- β
Total Inventory
283pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRG7CH75K10EF-R from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| IGBT Type | - | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | - | |
| Current - Collector Pulsed (Icm) | - | |
| Vce(on) (Max) @ Vge, Ic | 1.53V @ 15V, 20A | |
| Power - Max | - | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | 500nC | |
| Td (on/off) @ 25Β°C | 120ns/445ns | |
| Test Condition | 600V, 100A, 5Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -40Β°C ~ 175Β°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
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Datasheet & Documents
irg7ch75k10ef-r.pdf
PDF Document Β· 4 pages
