Heisener Electronics
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IRFU9N20D

200V|9.4A (Tc)|86W (Tc)
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MOSFET N-CH 200V 9.4A I-PAK

Specifications

Brand
Infineon Technologies
Package
IPAK (TO-251)
Packaging
—
Weight
—

Total Inventory

386pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFU9N20D from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds560pF @ 25V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Datasheet & Documents

irfr9n20dtrr.pdf

PDF Document · 11 pages

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