Heisener Electronics
BOM

IRFU9014N

60V|5.1A (Tc)|2.5W (Ta), 25W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH 60V 5.1A I-PAK

Specifications

Brand
Infineon Technologies
Package
IPAK (TO-251)
Packaging
—
Weight
—

Total Inventory

366pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFU9014N from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageIPAK (TO-251)
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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