Heisener Electronics
BOM

IRFSL4710PBF

100V|75A (Tc)|3.8W (Ta), 200W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 100V 75A TO-262

Specifications

Brand
Infineon Technologies
Package
TO-262
Packaging
—
Weight
—

Total Inventory

482pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFSL4710PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 45A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6160pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Recommended Products

3296X-1-202A

3296X-1-202A

TRIMMER 2K OHM 0.5W PC PIN SIDE

656L25003I3T

656L25003I3T

XTAL OSC XO 250.0000MHZ LVDS SMD

SIT1602BC-21-30S-75-000000D

SIT1602BC-21-30S-75-000000D

MEMS OSC XO 75.0000MHZ H/LV-CMOS

GRM0335C1H7R1CA01D

GRM0335C1H7R1CA01D

CAP CER 7.1PF 50V NP0 0201

LE-UW-D1W2-01-5P-IM-T10-HE

LE-UW-D1W2-01-5P-IM-T10-HE

LED OSTAR HEADLAMP

JAN1N4972US

JAN1N4972US

DIODE ZENER 39V 5W D5B

1N6113US_245

1N6113US_245

TVS DIODE 15.2V 29V

PESD1IVN27-AX

PESD1IVN27-AX

TVS DIODE 27V 45V SOD323

1753307

1753307

TERM BLOCK HDR 4POS 90DEG 5.08MM

0387291022

0387291022

CONN BARRIER STRIP 7CIRC 0.375"