Heisener Electronics
BOM

IRFSL4321PBF

150V|85A (Tc)|350W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 150V 83A TO-262

Specifications

Brand
Infineon Technologies
Package
TO-262
Packaging
—
Weight
—

Total Inventory

166pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFSL4321PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15mOhm @ 33A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4460pF @ 25V
FET Feature-
Power Dissipation (Max)350W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Recommended Products

RWR74N1000FRB12

RWR74N1000FRB12

RES 100 OHM 5W 1% WW AXIAL

RK73H1ETTP6200D

RK73H1ETTP6200D

RES 620 OHM 0.50% 1/10W 0402

9250-276-RC

9250-276-RC

FIXED IND 27MH 16MA 308 OHM TH

SIT1602BI-12-30E-48-000000G

SIT1602BI-12-30E-48-000000G

MEMS OSC XO 48.0000MHZ H/LV-CMOS

C907U222MZVDAAWL40

C907U222MZVDAAWL40

CAP CER 2200PF 440VAC Y5V RADIAL

S-L1L2

S-L1L2

IC CHIP

VS8-D4-D4-21-415-CE

VS8-D4-D4-21-415-CE

VS CONFIGURABLE POWER SUPPLY

EPM7512AEFC256-7

EPM7512AEFC256-7

IC CPLD 512MC 7.5NS 256FBGA

GMC13DRTS-S734

GMC13DRTS-S734

CONN EDGE DUAL FMALE 26POS 0.100

122A10809X

122A10809X

CONN 32POS FML R/A ROW A+C