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IRFS634B_FP001_1

250V|8.1A (Tc)|38W (Tc)
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MOSFET N-CH 250V 8.1A TO-220F

Specifications

Brand
ON Semiconductor
Package
TO-220F
Packaging
—
Weight
—

Total Inventory

422pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFS634B_FP001_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 4.05A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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Datasheet & Documents

irfs634b_fp001.pdf

PDF Document · 10 pages

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Datasheet Preview

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