IRFS31N20DTRR

200V|31A (Tc)|3.1W (Ta), 200W (Tc)

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MOSFET N-CH 200V 31A D2PAK

333pcs

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Purchase Quantity

MOQ: 1 pcs

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Manufacturer	Infineon Technologies
Series	HEXFET®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2370pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB