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IRFR3412PBF

100V|48A (Tc)|140W (Tc)
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MOSFET N-CH 100V 48A DPAK

Specifications

Brand
Infineon Technologies
Package
D-Pak
Packaging
—
Weight
—

Total Inventory

239pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFR3412PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs25mOhm @ 29A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs89nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3430pF @ 25V
FET Feature-
Power Dissipation (Max)140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

irfr3412trpbf.pdf

PDF Document · 11 pages

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Datasheet Preview

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