Heisener Electronics
BOM

IRFPG30PBF

1000V|3.1A (Tc)|125W (Tc)
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MOSFET N-CH 1000V 3.1A TO-247AC

Specifications

Brand
Vishay Siliconix
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

728pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFPG30PBF from Vishay Siliconix fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds980pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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Datasheet & Documents

irfpg30.pdf

PDF Document · 9 pages

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Datasheet Preview

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