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30V|8.8A (Ta), 19A (Tc)|2.1W (Ta)
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MOSFET N-CH 30V 8.8A PQFN
Specifications
- Brand
- Infineon Technologies
- Package
- PG-TSDSON-6
- Packaging
- —
- Weight
- —
Total Inventory
118pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IRFHS8342TR2PBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 19A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8.5A, 10V | |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA | |
| Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.1W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TSDSON-6 | |
| Package / Case | 6-PowerVDFN |
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