Heisener Electronics
BOM

IRFHM830TRPBF

30V|21A (Ta), 40A (Tc)|2.7W (Ta), 37W (Tc)
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MOSFET N-CH 30V 21A PQFN

Specifications

Brand
Infineon Technologies
Package
PQFN (3x3)
Packaging
—
Weight
—

Total Inventory

5,675pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IRFHM830TRPBF from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2155pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 37W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePQFN (3x3)
Package / Case8-VQFN Exposed Pad

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